Orthogonal photoresist works like any other photoresist - same coating, baking, exposure, development and stripping steps as in any other system. Though it is compatible with a wider range of materials than traditional resist, no performance is lost. The i-line capable resist exceeds the performance of the steppers we have used for optimization, with resolutions below 500 nm demonstrated. Electron beam lithography has shown the resolution can go to 30 nm, so for typical organic electronic applications, the resist will not limit your device geometry. Our resists have been used both for etch processes as well as lift-off in order to have the widest process and materials compatibility. It is possible to pattern multiple levels of organic materials, since underlying layers are not damaged by the resist chemistry. Lastly, the wavelength can be tuned to suit your high-resolution, or low-cost production needs. Let us know what level of performance you need in your manufacturing process.